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METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

ClassOfInanimatePhysicalObject

http://data.posccaesar.org/rdl/RDS6647335

hasCreationDate2006.08.10
hasCreatoru20683
hasDefinitionAn insulated-gate field-effect transistor in which the insulating layer between each gate electrode and the channel is oxide material
hasDesignationMETAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
hasIdPCARDS6647335
hasNoteIEV 521-04-55
hasStatusQualified

Referenced by (6)

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